Ionbeam Scientific Providing Next Generation Ion Beam Technology, Gridless Ion Sources, Spare Parts and Consumables to Research and Industry Worldwide. Providing Next Generation Ion Beam Technology, Gridless Ion Sources, Spare Parts and Consumables to Research and Industry Worldwide.
 
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  EH 400
  EH 1000
  EH 2000
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KRI EH 2000 Gridless Ion Source - Introduction

The new EH 2000 is a High-Output Gridless Ion Source with performance levels suited to the larger deposition system.

Producing an impressive output of 2.5A of Ion beam current over an ion energy range of 40 – 210 eV, the EH 2000 totally outperforms its ‘first generation’ counterpart. Total redesign has resulted in significantly enhanced performance, reliability and reduced operational costs.

KRI EH2000 Gridless Ion Source
© KRI 2002
EH2000 Versions
 EH 2000 High-Output Filamentless version
EH 2000 Ion Source - Hollow Cathode (Filamentless) Version This unit is provided with the new design of hollow cathode electron source in place of a thermionic filament. Extremely long operational times of 400 – 1000 hours are possible. In addition, water cooling and the absence of a filament significantly reduces thermal radiation to substrates and promotes a very high purity, controllable thin film environment.
Typical Applications

The EH 2000 is typically suited for installation in the larger deposition system where optimum ion beam current density is required over a large area. Its use is also beneficial where temperature sensitive substrates may be processed, or alternatively’ where precise control over process temperature may be of concern to film growth.

Process Benefits

The wider operational range of the EH 2000 Gridless Ion Source offers all of the benefits of the new KRI ion source range and also provides a number of process enhancements.

  • Higher deposition rates possible with low energy, high current IBAD due to higher ion to atom arrival ratio – allows shorter process cycle times
  • Filamentless water-cooled design promotes constant process temperatures and controlled film growth
  • Very long process times achievable without interruption
  • Simple and rapid maintenance minimises system down time
Advantages
  • Optimised operation for different gases
    • O2, Ar, N2, Hydrocarbons, Xe
  • Opened-up range of operation
    • Ion energies, ion currents and process pressures
  • Increased reliability
    • Rugged connectors and cables
    • Field proven power modules and components
    • Gas delivery system efficiently distributes gas and minimizes leaks
  • Easier and less expensive to maintain and use
    • Modular anode
    • Enhanced magnetic circuit
    • Shielded and covered insulators and cables
    • Smaller and weighs less
  • Designed for process flexibility and opportunity
    • Interchangeable and optimized process modules
      • Flexible range of operation of ion beam properties
      • Opens-up new process windows for film applications
  • Operates from Mark II HO power supply
    • Drop-in replacement
    • Process and hardware compatible



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