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 Ion beam systems

To address a worldwide market need for ion beam systems to exploit this ever growing technology, Ionbeam Scientific is pleased to able to offer its wide range of Ion Source products in a range of Ion Beam Milling (IBE) (RIBE) and Ion Beam Deposition (IBS) (DIBS) Systems.

About our ion beam systems

To address the worldwide market need for Ion Beam Milling and Deposition Systems, Ionbeam Scientific have formed a partnership with Scientific Vacuum Systems Ltd. With both organisations historically being located within close proximity in Wokingham, UK, and having worked together previously, we have combined our many years experience in Ion Beam and Deposition Systems process knowledge and systems design, and have introduced a completely new range of Ion Beam Systems ranging from R&D through to medium and large scale batch production units incorporating the latest Ion Source designs and technology.

The following broadly outlines our range of ion beam systems along with further details on available features.

ViB series ion beam milling / deposition systems

Gridded source design

Gridded source design

The use of our gridded DC and RFICP Kaufman designed Ion Sources ranging from 4cm to 30cm along with a wide choice of patented design self-aligning grid optics, ensures that the correct Ion Source and System Geometry may be matched to individual customer process needs. This is very important, as unlike our competitors, it means we are able to specifically configure a system for a given process, rather than expecting the customer to compromise with a rigid ‘what we have to offer standard package’.

Gridless ion sources

Gridless ion sources

Apart from our range of gridded ion sources, we also have the advantage of being able to offer a complete range of EH Series DC gridless high current, low energy Kaufman designed ion sources. These are able to deliver exceptionally high ion beam current over a wide area. They are fully reactive gas process compatible and are available in standard filament or Hollow Cathode ‘filamentless’ versions.

Substrate fixturing

Substrate fixturing

A unique design of rotary directly cooled substrate fixturing is able to cater for a wide range of substrate sizes and materials, whilst being able to maintain substrate temperatures typically at <50 °C during processing hence safeguarding thermally sensitive substrates and photoresist materials.

Careful system design and system geometry with a choice of Ion Source and Grid Optics means controlled etch uniformities of +/- 3% or better may be routinely achieved.

Pumping system and control automation

Pumping system and control automation

Pump systems may be high speed Cryo-pumped or Turbo-pumped packages. Gas handling systems are fabricated in stainless steel throughout and mass flow gas control is provided as standard.

System automation and process control is provided by an industry standard PLC with a touch colour LCD screen interface. This provides clear animated displays of system status and user friendly operation, process recipe creation, storage and selection.

Inert or reactive ion beam milling (IBE, RIBE, CAIBE)

Inert or reactive ion beam milling (IBE, RIBE, CAIBE)

Systems may be configured for operation on Inert or Reactive gases. LFN Plasma Bridge neutralisation is provided as standard on systems equipped with the RFICP source for ‘filamentless’ operation. The LFN neutraliser is of a unique ‘plug-in’ modular construction to enable ease of maintenance.

Systems equipped with KDC DC sources may be provided with LFN Plasma-Bridge neutralisation or Hollow Cathode neutralisation as an option. For Chemically Assisted Ion Beam Etching a gas bleed ring is introduced close to the substrate.

Suitable porting is provided for optional installation of a Residual Gas Analyser and End Point Detection by either Optical or SIMS methods.

Inert and reactive ion beam deposition (IBSD, DIBS)

Inert or reactive ion beam sputtering (IBS, DIBS)

Systems are available in single or dual ion source configurations. In its simplest format, the IBS deposition system is equipped with a single ion source, the beam of which is aimed at a cooled sputtering target. A rotating substrate fixture is provided to intercept the sputtered material. This process has major advantages in its ability to provide very dense, fine grain structured thin films, of both metal and dielectric materials and is typically carried out at much lower pressures than conventional DC or RF sputtering.

The system may be further enhanced by adding a second ion source which is aimed at the substrate. This permits very efficient substrate pre-cleaning to be carried out immediately prior to deposition. In addition, this second ion source may be operated during the deposition process, for further density enhancement of thin film properties, or may be used with reactive gases for creation of oxide or nitride films. Another advantage of this process is that it often eliminates the need for substrate heating.

 Please contact us for further information